Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
文献类型：专利
| 作者 | CHUA, SOO JIN; LI, PENG; HAO, MAOSHENG; ZHANG, JI |
| 发表日期 | 2003-11-11 |
| 专利号 | US6645885 |
| 著作权人 | NATIONAL UNIVERSITY OF SINGAPORE, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
| 英文摘要 | Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs). |
| 公开日期 | 2003-11-11 |
| 申请日期 | 2001-09-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41778]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL UNIVERSITY OF SINGAPORE, THE |
| 推荐引用方式 GB/T 7714 | CHUA, SOO JIN,LI, PENG,HAO, MAOSHENG,et al. Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). US6645885. 2003-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。