Semiconductor laser manufacturing method
文献类型：专利
| 作者 | SHIMA, AKIHIRO; ISSHIKI, KUNIHIKO |
| 发表日期 | 1992-02-18 |
| 专利号 | US5089437 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser manufacturing method |
| 英文摘要 | A double heterojunction semiconductor laser according to the invention includes first and third cladding layers sandwiching an active layer. The third cladding layer includes a mesa opposite a light emitting region of the active layer. The mesa is confined by a current blocking layer. A cap layer that is part of the mesa is used as a dopant diffusion source to dope a light emitting region of the active layer heavily. A second cladding layer may be present between the active layer and third cladding layer having the same conductivity type as the third cladding layer adjacent the light emitting region but the opposite conductivity type elsewhere. A semiconductor laser according to the invention may also include a stripe groove structure. The semiconductor lasers include pnpn structures outside the light emitting region and in window structures adjacent the facets of the semiconductor laser for suppressing leakage currents, thereby increasing laser efficiency and reducing threshold current while increasing power output. |
| 公开日期 | 1992-02-18 |
| 申请日期 | 1990-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 推荐引用方式 GB/T 7714 | SHIMA, AKIHIRO,ISSHIKI, KUNIHIKO. Semiconductor laser manufacturing method. US5089437. 1992-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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