High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI |
| 发表日期 | 2002-09-17 |
| 专利号 | US6452954 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode |
| 英文摘要 | In a semiconductor laser device: an active layer; a first upper cladding layer of a first conductive type; a current confinement layer of a second conductive type; a second upper cladding layer of the first conductive type; and a contact layer of the first conductive type are formed above a GaN layer of the second conductive type. In the semiconductor laser device: a groove is formed through the full thickness of the current confinement layer so as to form an index-guided structure; the active layer is a single or multiple quantum well active layer formed by alternately forming at least one Inx1Ga1-x1N well and a plurality of Inx2Ga1-x2N barriers, where 0<=x2 |
| 公开日期 | 2002-09-17 |
| 申请日期 | 2001-02-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI. High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode. US6452954. 2002-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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