Method of fabricating semiconductor laser using selective growth
文献类型：专利
| 作者 | FUJIMOTO, TSUYOSHI; NAITO, YUMI; OKUBO, ATSUSHI; YAMADA, YOSHIKAZU |
| 发表日期 | 2001-01-09 |
| 专利号 | US6171878 |
| 著作权人 | MITSUI CHEMICALS INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor laser using selective growth |
| 英文摘要 | In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth.In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers. |
| 公开日期 | 2001-01-09 |
| 申请日期 | 1998-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS INC. |
| 推荐引用方式 GB/T 7714 | FUJIMOTO, TSUYOSHI,NAITO, YUMI,OKUBO, ATSUSHI,et al. Method of fabricating semiconductor laser using selective growth. US6171878. 2001-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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