Nanometer-scale silicon-on-insulator photonic componets
文献类型：专利
| 作者 | SOREF, RICHARD A. |
| 发表日期 | 1998-11-17 |
| 专利号 | US5838870 |
| 著作权人 | AIR FORCE, UNITED STATES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nanometer-scale silicon-on-insulator photonic componets |
| 英文摘要 | Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip. |
| 公开日期 | 1998-11-17 |
| 申请日期 | 1997-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41796]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AIR FORCE, UNITED STATES |
| 推荐引用方式 GB/T 7714 | SOREF, RICHARD A.. Nanometer-scale silicon-on-insulator photonic componets. US5838870. 1998-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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