Phase modulation semiconductor laser array
文献类型：专利
| 作者 | ETTENBERG, MICHAEL; CARLIN, DONALD B. |
| 发表日期 | 1990-02-20 |
| 专利号 | US4903275 |
| 著作权人 | GENERAL ELECTRIC COMPANY, A CORP. OF NY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Phase modulation semiconductor laser array |
| 英文摘要 | A phase-locked semiconductor laser array is dephased-locked by forming at least two p-type contacts electrically isolated from one another coupled to one side of the active region and a single contact layer coupled to the other side of the active region. The same current is applied to two p-type contacts to form a single phase-locked far-field lobe. A different current is applied to one of the two p-type contacts to drive one contact harder than the other to form a dephased multiple lobe beam. An effective aperture at the receiver receives the in-phase single lobe and blocks the multiple lobes to produce a modulation effect at the receiver. |
| 公开日期 | 1990-02-20 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GENERAL ELECTRIC COMPANY, A CORP. OF NY |
| 推荐引用方式 GB/T 7714 | ETTENBERG, MICHAEL,CARLIN, DONALD B.. Phase modulation semiconductor laser array. US4903275. 1990-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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