Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
文献类型：专利
| 作者 | OH, SU HWAN; PARK, SAHNGGI; BAEK, YONGSOON; OH, KWANG-RYONG |
| 发表日期 | 2011-04-05 |
| 专利号 | US7920322 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure |
| 英文摘要 | Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure. |
| 公开日期 | 2011-04-05 |
| 申请日期 | 2007-10-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41807]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | OH, SU HWAN,PARK, SAHNGGI,BAEK, YONGSOON,et al. Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure. US7920322. 2011-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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