Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | ASHIDA, MASAYOSHI |
| 发表日期 | 1999-09-07 |
| 专利号 | US5949809 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | A semiconductor laser device is of a double-hetero structure having an active layer sandwiched between a first conductivity type cladding layer and a second conductivity type cladding layer, one of the first and second conductivity type cladding layers being formed by a first cladding layer and a second cladding layer. A current blocking layer is provided between the first cladding layer and the second cladding layer, and formed of a material having a forbidden band gap wider than that of the active layer and a refractive index lower than that of the one cladding layer, the current blocking layer being formed with a current injecting region having a conductivity type different from that of the one cladding layer. An over-saturation absorbing layer is formed in the current blocking layer, the over-saturation absorbing layer is formed of such a material that has approximately the same forbidden band gap as that of the active layer. It is possible to set independently the distance between the active layer and the over-saturation absorbing layer as well as the distance between the active layer and the current blocking layer, so as to provide device operation on a low operating current (lowered threshold value) with low noise and astigmatism in a multi mode instead of a longitudinal mode. |
| 公开日期 | 1999-09-07 |
| 申请日期 | 1997-09-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41808]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | ASHIDA, MASAYOSHI. Semiconductor laser device and method for manufacturing the same. US5949809. 1999-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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