Strong distributed feedback semiconductor laser
文献类型:专利
作者 | CARRAS, MATHIEU; DE ROSSI, ALFREDO |
发表日期 | 2009-07-28 |
专利号 | US7567606 |
著作权人 | THALES |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Strong distributed feedback semiconductor laser |
英文摘要 | The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [λ4×neff] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser. |
公开日期 | 2009-07-28 |
申请日期 | 2008-05-09 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/41818] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | THALES |
推荐引用方式 GB/T 7714 | CARRAS, MATHIEU,DE ROSSI, ALFREDO. Strong distributed feedback semiconductor laser. US7567606. 2009-07-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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