中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strong distributed feedback semiconductor laser

文献类型:专利

作者CARRAS, MATHIEU; DE ROSSI, ALFREDO
发表日期2009-07-28
专利号US7567606
著作权人THALES
国家美国
文献子类授权发明
其他题名Strong distributed feedback semiconductor laser
英文摘要The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [λ4×neff] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.
公开日期2009-07-28
申请日期2008-05-09
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/41818]  
专题半导体激光器专利数据库
作者单位THALES
推荐引用方式
GB/T 7714
CARRAS, MATHIEU,DE ROSSI, ALFREDO. Strong distributed feedback semiconductor laser. US7567606. 2009-07-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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