Lichtemittierende Halbleitervorrichtung und Übergitterstruktur
文献类型：专利
| 作者 | IGA KENICHI INTELLECTUAL PROPE,JP; KOYAMA FUMIO INTELLECTUAL PROP,JP; TAKAGI TAKESHI INTELLECTUAL PR,JP |
| 发表日期 | 1997-05-07 |
| 专利号 | DE69213787T2 |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Lichtemittierende Halbleitervorrichtung und Übergitterstruktur |
| 英文摘要 | A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. |
| 公开日期 | 1997-05-07 |
| 申请日期 | 1992-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | IGA KENICHI INTELLECTUAL PROPE,JP,KOYAMA FUMIO INTELLECTUAL PROP,JP,TAKAGI TAKESHI INTELLECTUAL PR,JP. Lichtemittierende Halbleitervorrichtung und Übergitterstruktur. DE69213787T2. 1997-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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