Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
文献类型：专利
| 作者 | COULT, DAVID G.; DERKITS, JR., GUSTAV E.; LENTZ, CHARLES W.; SEGNER, BRYAN P. |
| 发表日期 | 2003-09-23 |
| 专利号 | US6625367 |
| 著作权人 | AGERE SYSTEMS GUARDIAN CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor |
| 英文摘要 | The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench. |
| 公开日期 | 2003-09-23 |
| 申请日期 | 2001-08-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41828]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGERE SYSTEMS GUARDIAN CORPORATION |
| 推荐引用方式 GB/T 7714 | COULT, DAVID G.,DERKITS, JR., GUSTAV E.,LENTZ, CHARLES W.,et al. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor. US6625367. 2003-09-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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