Refractive index control optical semiconductor device
文献类型：专利
| 作者 | NIDO, MASAAKI; KIMURA, AKITAKA |
| 发表日期 | 1995-06-13 |
| 专利号 | US5425042 |
| 著作权人 | BENHOV GMBH, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Refractive index control optical semiconductor device |
| 英文摘要 | A refractive index control optical semiconductor device includes a semiconductor p-n junction structure, and a refractive index control semiconductor layer. The semiconductor p-n junction structure outputs light with a forward current. The refractive index control semiconductor layer is formed on a semiconductor substrate, is stacked on the semiconductor p-n junction structure to constitute an optical waveguide, causes a refractive index change of light to occur by carrier injection, and includes a multi-quantum well structure formed by alternately stacking a semiconductor quantum well layer and a barrier layer having a bandgap larger than that of the semiconductor quantum well layer at a plurality of periods. The semiconductor quantum well layer has a lattice constant smaller than that of the semiconductor substrate. The thickness of the semiconductor quantum well layer is set such that a lowest heavy hole sub-band and a lowest light hole sub-band of the semiconductor quantum well layer have nearly the same energy at a GAMMA -point in a wave number space. |
| 公开日期 | 1995-06-13 |
| 申请日期 | 1994-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BENHOV GMBH, LLC |
| 推荐引用方式 GB/T 7714 | NIDO, MASAAKI,KIMURA, AKITAKA. Refractive index control optical semiconductor device. US5425042. 1995-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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