Nitride semiconductor laser element and external-cavity semiconductor laser device
文献类型：专利
| 作者 | KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI |
| 发表日期 | 2011-06-28 |
| 专利号 | US7970035 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser element and external-cavity semiconductor laser device |
| 英文摘要 | Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less. |
| 公开日期 | 2011-06-28 |
| 申请日期 | 2009-03-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI. Nitride semiconductor laser element and external-cavity semiconductor laser device. US7970035. 2011-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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