Semiconductor laser and method of fabricating semiconductor laser
文献类型：专利
| 作者 | KIMURA, TATSUYA; MIYASHITA, MOTOHALU; MIHASHI, YUTAKA |
| 发表日期 | 2000-01-25 |
| 专利号 | US6018539 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of fabricating semiconductor laser |
| 英文摘要 | A semiconductor laser includes a first conductivity type semiconductor substrate having a gain region and a spot size changing region adjacent each other; a first conductivity type lower cladding layer disposed on the substrate; an active layer disposed on the lower cladding layer and having a thickness which is uniform in the gain region and gradually decreases in the spot size changing region with distance from the gain region; a second conductivity type upper cladding layer disposed on the active layer and having a stripe-shaped ridge, the ridge extending along the gain region and the spot size changing region; a first electrode disposed on the ridge of the upper cladding layer; and a second electrode disposed on a rear surface of the substrate. Current flow is concentrated in the ridge of the upper cladding layer. Further, when the ridge is fabricated, portions of the active layer in which a current will be injected during operation of the laser are not exposed to the atmosphere and not oxidized, resulting in a highly reliable semiconductor laser with an integrated spot size changing part and gain part. |
| 公开日期 | 2000-01-25 |
| 申请日期 | 1998-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KIMURA, TATSUYA,MIYASHITA, MOTOHALU,MIHASHI, YUTAKA. Semiconductor laser and method of fabricating semiconductor laser. US6018539. 2000-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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