Fabrication method of a semiconductor laser device
文献类型：专利
| 作者 | KITO, MASAHIRO; ISHINO, MASATO; TODA, TOMOAKI; NAKANO, YOSHIAKI |
| 发表日期 | 2005-08-23 |
| 专利号 | US6933159 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Fabrication method of a semiconductor laser device |
| 英文摘要 | In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed. |
| 公开日期 | 2005-08-23 |
| 申请日期 | 2003-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KITO, MASAHIRO,ISHINO, MASATO,TODA, TOMOAKI,et al. Fabrication method of a semiconductor laser device. US6933159. 2005-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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