Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
文献类型：专利
| 作者 | AMANO, HIROSHI; AKASAKI, ISAMU; KANEKO, YAWARA; YAMADA, NORIHIDE; TAKEUCHI, TETSUYA; WATANABE, SATOSHI |
| 发表日期 | 2004-12-07 |
| 专利号 | US6829273 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same |
| 英文摘要 | The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer. |
| 公开日期 | 2004-12-07 |
| 申请日期 | 2001-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41851]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | AMANO, HIROSHI,AKASAKI, ISAMU,KANEKO, YAWARA,et al. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same. US6829273. 2004-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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