Laser diode device and method of manufacturing laser diode device
文献类型：专利
| 作者 | FUTAGAWA, NORIYUKI; NAKAJIMA, HIROSHI; YANASHIMA, KATSUNORI; KYONO, TAKASHI; ADACHI, MASAHIRO |
| 发表日期 | 2014-11-18 |
| 专利号 | US8891568 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode device and method of manufacturing laser diode device |
| 英文摘要 | A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. |
| 公开日期 | 2014-11-18 |
| 申请日期 | 2012-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41853]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | FUTAGAWA, NORIYUKI,NAKAJIMA, HIROSHI,YANASHIMA, KATSUNORI,et al. Laser diode device and method of manufacturing laser diode device. US8891568. 2014-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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