Semiconductor ridge waveguide laser with asymmetrical cladding
文献类型：专利
| 作者 | HARDER, CHRISTOPH S.; IYER, SRIDHAR V.; MEIER, HEINZ P.; PHILLIPS, JR., ALFRED; BEHFAR-RAD, ABBAS |
| 发表日期 | 1994-04-05 |
| 专利号 | US5301202 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor ridge waveguide laser with asymmetrical cladding |
| 英文摘要 | A semiconductor ridge waveguide laser having a high value of horizontal far-field wherein the laser structure includes a substrate, a first or lower cladding layer composed of a AlGaAs on the substrate, an acting layer on the lower cladding layer, and a second or upper cladding layer composed of AlGaAs on the active layer. The upper cladding layer includes a raised ridge portion formed by etching the upper cladding layer through a mask. A contact layer is disposed on top of the ridge portion. The aluminum mole concentration of the lower cladding layer is greater than the aluminum mole concentration of the upper cladding layer. This forces the optical mode towards the upper cladding layer and results in an increased lateral waveguide confinement that produces a high horizontal far-field. |
| 公开日期 | 1994-04-05 |
| 申请日期 | 1993-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41864]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | HARDER, CHRISTOPH S.,IYER, SRIDHAR V.,MEIER, HEINZ P.,et al. Semiconductor ridge waveguide laser with asymmetrical cladding. US5301202. 1994-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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