Semiconductor optical amplifier with wideband electrical response
文献类型：专利
| 作者 | OLSHANSKY, ROBERT; JOYCE, GERALD R. |
| 发表日期 | 1992-06-02 |
| 专利号 | US5119039 |
| 著作权人 | GTE LABORATORIES INCORPORATED, A DE CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical amplifier with wideband electrical response |
| 英文摘要 | A semiconductor optical amplifier includes an active region having facets at opposite ends thereof which define an optical cavity having maximum optical gain at a gain peak wavelength .lambda..sub.pk. An antireflection coating on each of the facets has a wavelength .lambda..sub.min of minimum reflectivity that is separated in wavelength from the gain peak wavelength, preferably by about 5 to 30 nanometers. The optical amplifier is operated at a bias current greater than a stimulated emission threshold bias current of the device. The input optical signal has a wavelength at or near the wavelength .lambda..sub.min of minimum reflectivity of the antireflection coatings. The optical amplifier has an electrical bandwidth on the order of 1 to 10 GHz. |
| 公开日期 | 1992-06-02 |
| 申请日期 | 1990-12-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTE LABORATORIES INCORPORATED, A DE CORP. |
| 推荐引用方式 GB/T 7714 | OLSHANSKY, ROBERT,JOYCE, GERALD R.. Semiconductor optical amplifier with wideband electrical response. US5119039. 1992-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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