Impurity-doped semiconductor laser device for single wavelength oscillation
文献类型：专利
| 作者 | KUSHIBE, MITSUHIRO; EGUCHI, KAZUHIRO; FUNAMIZU, MASAHISA; OHBA, YASUO |
| 发表日期 | 1990-05-22 |
| 专利号 | US4928285 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Impurity-doped semiconductor laser device for single wavelength oscillation |
| 英文摘要 | An impurity-doped double-heterostructure semiconductor laser adapted for single-longitudinal-mode operation is disclosed which includes a semiconductive substrate and a mesa of double-heterostructure formed over the substrate. The mesa comprises an active layer serving as a light-emitting layer, a waveguiding layer adjacent to the active layer and clad layers interposing the active layer and the waveguiding layer therebetween. A high-resistively layer is formed to bury the lateral surfaces of the mesa. The active layer contains impurities of a rare earth element with a previously selected concentration. The limited concentration of impurities is high enough to confine only light components falling within a specific range of wavelength, of all the light components produced in the active layer when the laser device is operative, within the active layer so as to provide single wavelength laser oscillation and low enough to inhibit the initiation of spontaneous emission of the rare earth element within the active layer. For example, the concentration may be set to 1x1018 cm-3 or below. |
| 公开日期 | 1990-05-22 |
| 申请日期 | 1989-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KUSHIBE, MITSUHIRO,EGUCHI, KAZUHIRO,FUNAMIZU, MASAHISA,et al. Impurity-doped semiconductor laser device for single wavelength oscillation. US4928285. 1990-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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