ダブルヘテロウェハ及びダブルヘテロ接合型半導体レーザ装置
文献类型：专利
| 作者 | 粒来 保彦; 大場 康夫 |
| 发表日期 | 1997-05-02 |
| 专利号 | JP2645055B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | ダブルヘテロウェハ及びダブルヘテロ接合型半導体レーザ装置 |
| 英文摘要 | PURPOSE:To reduce lattice mismatching of a p-clad layer and to make it possible to control both of p- and n-clad layers to have lattice mismatching coefficients within + or -0.1%, by deviating the lattice mismatching coefficient of the n-clad layer to the plus side when forming a double hetero structure. CONSTITUTION:In a double hetero junction type semiconductor laser device formed on a GaAs substrate 10 which is provided with an active layer 12 between an n-type and p-type In1-y(Ga1-xAlx)yP(0<=x<=1, 0<=y<=1) clad layers 11, 13, the ratio a/a0 of the lattice constant (a) of the n-type clad layer 11 in the vertical direction of the substrate 10 and the lattice constant a0 of the GaAs substrate 10 is set at 0005<=a/a0<=00 By forming the lattice mismatching coefficient of the n-type In1-y(Ga1-xAlx)xP clad layer 11 deviated to more than +0.05% in this way, deviation of about 0.1-0.15% to the minus side developed by Zn doping in the growth of the p-clad layer 13 is compensated. The lattice mismatching coefficient can be thereby controlled within + or -0.1% for both of p- and n-quantity clad layers. |
| 公开日期 | 1997-08-25 |
| 申请日期 | 1988-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 粒来 保彦,大場 康夫. ダブルヘテロウェハ及びダブルヘテロ接合型半導体レーザ装置. JP2645055B2. 1997-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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