Semiconductor laser and method for fabricating the same
文献类型：专利
| 作者 | KURAMATA, AKITO |
| 发表日期 | 1998-12-15 |
| 专利号 | US5850410 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for fabricating the same |
| 英文摘要 | The present invention relates to a semiconductor laser having light emitting wavelengths from blue to UV, more specifically a semiconductor laser which can form a laser resonator by perpendicular cleavage of the substrate and a method for fabricating the semiconductor laser. The semiconductor laser comprises a single crystal substrate 10 of cubic system, and an epitaxial crystal layer 12 with the laser resonator formed by cleavage planes 30 thereof. Cleavage planes 28 of the single crystal substrate 10 and the cleavage planes 30 of the epitaxial crystal layer 12 are not parallel with each other, and the intersection between the cleavage planes 30 of the epitaxial crystal layer 12 and the surface of the single crystal substrate substantially agrees with the intersection L between the cleavage planes 28 of the single crystal substrate 10 and the surface of the single crystal substrate 10. |
| 公开日期 | 1998-12-15 |
| 申请日期 | 1996-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41872]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | KURAMATA, AKITO. Semiconductor laser and method for fabricating the same. US5850410. 1998-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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