集積型光半導体装置およびその駆動方法
文献类型：专利
| 作者 | 北村 光弘 |
| 发表日期 | 1998-02-27 |
| 专利号 | JP2751558B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 集積型光半導体装置およびその駆動方法 |
| 英文摘要 | PURPOSE:To enable an optical semiconductor device to be improved in FM modulation efficiency and optical output by a method wherein a DFB laser of low reflection and high reflection end face structure is divided into two parts in a direction of a resonator. CONSTITUTION:An InGaAsP guide layer 3 correspondent to the emitted light 3mum in wavelength, an active layer 4 of multi-quantum well structure, and a clad layer 5 are successively grown on a substrate 1 where a diffraction grating 2 has been formed. A buried layer is made to grow through a conventional process, then split electrodes 6 are provided, the substrate 1 is cut into unit elements, and a low reflection film 9 and a high reflection film 10 are provided to the end faces of the unit element respectively. The end faces are set to 0% and 95% in reflectivity respectively. Therefore, an integrated type optical semiconductor device which is high in optical output, variable in wavelength, high in efficiency, and flat in FM response property can be realized. |
| 公开日期 | 1998-05-18 |
| 申请日期 | 1990-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41874]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 北村 光弘. 集積型光半導体装置およびその駆動方法. JP2751558B2. 1998-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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