Semiconductor laser device and a method for fabricating the same
文献类型：专利
| 作者 | TSUNODA, ATSUO |
| 发表日期 | 2003-02-11 |
| 专利号 | US6518159 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method for fabricating the same |
| 英文摘要 | An object of the present invention is provide an InGaAlP-based semiconductor layer of a good crystal quality at a higher temperature up to a re-evaporating temperature by MBE process. A buffer layer made of GaAs and a buffer layer made of GaInP are formed by MBE (molecular beam epitaxy) process on a GaAs substrate having a facet, which is to be a main facet, inclined by theta in [011] direction from (100) facet. Then semiconductor layers are formed by MBE process so as to include cladding layers having a bandgap Egc and an AlGaInP active layer having a bandgap Ega which is adjusted by an amount of III-group element to be represented by Ega |
| 公开日期 | 2003-02-11 |
| 申请日期 | 2000-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TSUNODA, ATSUO. Semiconductor laser device and a method for fabricating the same. US6518159. 2003-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。