Optically isolated laser diode array
文献类型：专利
| 作者 | PATEL, RUSHIKESH |
| 发表日期 | 1993-05-04 |
| 专利号 | US5208823 |
| 著作权人 | OPTO POWER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optically isolated laser diode array |
| 英文摘要 | An optically isolated laser diode array is formed by growing a quantum well layer on a substrate after a plurality of strips are placed on the substrate. As the lattice of the quantum well of layer grows over the strips, it deforms the lattice structure of such layer causing it to be optically lossy in the regions above the strips. An insulative layer may then be deposited on the quantum well layer and patterned so that electrical contact may be made to the quantum well layer active regions which are disposed between each of the strips. In these active regions, the quantum well layer lattice structure is well formed to provide high quality active regions for laser diodes. |
| 公开日期 | 1993-05-04 |
| 申请日期 | 1991-09-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTO POWER CORPORATION |
| 推荐引用方式 GB/T 7714 | PATEL, RUSHIKESH. Optically isolated laser diode array. US5208823. 1993-05-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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