Narrow spectral width high-power distributed feedback semiconductor lasers
文献类型：专利
| 作者 | BOTEZ, DAN; EARLES, THOMAS L.; MAWST, LUKE J. |
| 发表日期 | 2001-02-27 |
| 专利号 | US6195381 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Narrow spectral width high-power distributed feedback semiconductor lasers |
| 英文摘要 | High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 mum or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths. |
| 公开日期 | 2001-02-27 |
| 申请日期 | 1998-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,EARLES, THOMAS L.,MAWST, LUKE J.. Narrow spectral width high-power distributed feedback semiconductor lasers. US6195381. 2001-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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