分布帰還型半導体レ-ザ装置
文献类型：专利
| 作者 | 茅根 直樹; 辻 伸二; 藤崎 芳久; 柏田 泰利; 平尾 元尚 |
| 发表日期 | 1994-08-24 |
| 专利号 | JP1994066509B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 分布帰還型半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser stably oscillating in a single mode by dividing a diffraction grating into regions having different Bragg wavelengths and arranging each resion in a cascade in the direction of an optical axis. CONSTITUTION:An N type InP layer (a buffer layer) 2, an InGaAsP layer (an active layer) 3 and an InGaAsP layer (an optical guide layer) 4 are grown on an N type InP substrate 1 through a known liquid phase growth method in succession. The surface of the optical guide layer 4 is exposed through an interference exposure method to form a desired pattern having periodic irregularities, and irregularities 7, 8 having different periods in a region I and a region II are shaped. A P type InP clad layer 5 and a P type InGaAsP layer (a contact layer) 6 are grown on the irregularities 7, 8 in succession, and an N side electrode 9 consisting of Au-Sn is formed on the lower side of the substrate 1 and a P-side electrode 10 composed of Cr-Au on the upper side of the contact layer 6. According to such constitution, single longitudinal mode oscillation can be realized with excellent reproducibility without depending upon the variance of an element. |
| 公开日期 | 1994-08-24 |
| 申请日期 | 1983-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41884]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 茅根 直樹,辻 伸二,藤崎 芳久,等. 分布帰還型半導体レ-ザ装置. JP1994066509B2. 1994-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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