Multiple quantum well semiconductor laser diode and DVD system using the same
文献类型：专利
| 作者 | SHIMADA, NAOHIRO |
| 发表日期 | 2001-09-18 |
| 专利号 | US6292502 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiple quantum well semiconductor laser diode and DVD system using the same |
| 英文摘要 | An InGaAlP active region 3, which substantially lattice-matches with a GaAs substrate 1, has a multiple quantum well structure (MQW) formed by quantum well layers 11 of InGaP. When the oscillating wavelength caused by the current injection is less than or equal to 670 nm, the thickness (Lz) of the InGaP quantum well layers 11 is set to be less than 8 nm to form a lattice mismatching so that the quantum well layers 11 have a greater lattice constant than that of the GaAs substrate 1, and a compressive strain is added to the quantum well layers 1 Thus, gain is increased by reducing the thickness of the quantum well layers 11 and adding the compressive strain thereto, so that it is possible to achieve the improvement of the temperature characteristics, such as a reduced threshold, an improved efficiency, and a reduced current during operation at a high temperature, in a laser having an oscillating wavelength of 650 nm. |
| 公开日期 | 2001-09-18 |
| 申请日期 | 1998-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41899]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SHIMADA, NAOHIRO. Multiple quantum well semiconductor laser diode and DVD system using the same. US6292502. 2001-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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