A semiconductor laser device and a method of making same
文献类型：专利
| 作者 | TAKAHIRO, SUYAMA; TOSHIRO, HAYAKAWA; KOHSEI, TAKAHASHI; MASAFUMI, KONDO; SABURO, YAMAMOTO |
| 发表日期 | 1990-10-10 |
| 专利号 | GB2225671B |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device and a method of making same |
| 英文摘要 | After sequentially forming a first clad layer 3, active layer 4, second clad layer 10, cap layer 11, and further layers 12, 13, on a substrate to form a laser, the further layers 12, 13, are selectively removed to form a window and in this window grooves 14 are formed from the surface of the cap layer 11 down into the second clad layer 10, an insulation layer 16 being formed in the groove, to form a current stripe structure, in which the grooves are used to confine current and the regions between adjacent grooves serve as light emitting regions. A structure may have only two grooves, or if an array is required, more than two grooves. |
| 公开日期 | 1990-10-10 |
| 申请日期 | 1989-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41902]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKAHIRO, SUYAMA,TOSHIRO, HAYAKAWA,KOHSEI, TAKAHASHI,et al. A semiconductor laser device and a method of making same. GB2225671B. 1990-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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