Semiconductor laser including ridge structure extending between window regions
文献类型：专利
| 作者 | ONO, KENICHI |
| 发表日期 | 1998-04-07 |
| 专利号 | US5737351 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser including ridge structure extending between window regions |
| 英文摘要 | A method of fabricating a semiconductor laser includes successively growing a lower cladding layer of a first conductivity type, an active layer having a superlattice structure, a first upper cladding layer of a second conductivity type, an etch stopping layer of the second conductivity type, and a second upper cladding layer of the second conductivity type on a semiconductor substrate of the first conductivity type; diffusing a dopant impurity into parallel stripe-shaped regions of the active layer to disorder the superlattice structure of the active layer in these regions; etching the second upper cladding layer to expose the etch stopping layer without exposing the etch stopping layer on the disordered regions, thereby producing a stripe-shaped ridge structure extending perpendicular to the disordered regions; and growing a current blocking layer on the etch stopping layer and on the disordered regions, contacting both sides of the ridge structure. Since an etchant used for patterning does not contact the etch stopping layer on the disordered regions of the active layer, unwanted penetration of the etch stopping layer is avoided. |
| 公开日期 | 1998-04-07 |
| 申请日期 | 1996-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ONO, KENICHI. Semiconductor laser including ridge structure extending between window regions. US5737351. 1998-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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