Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | ASHIDA, MASAYOSHI |
| 发表日期 | 2003-05-20 |
| 专利号 | US6567449 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A group of semiconductor layers of a first light emitting region(6) including an active layer(3), determined by a first wavelength of laser beam, sandwiched between two cladding layers(2) and(4) of which the band gap is greater than that of the active layer(3) are deposited on a semiconductor substrate Similarly, another group of semiconductor layers of a second light emitting region(16) including an active layer(13), determined by a second wavelength of laser beam, sandwiched between two cladding layers(12) and(14) of which the band gap is greater than that of the active layer 13 are deposited via a contact layer(5) on the first light emitting region(6). The first and the second light emitting region(6) and (16) are aligned with each other along the perpendicular (vertical) to the semiconductor substrate(1). Accordingly, a multi-color semiconductor laser having multiple laser beam sources in their respective light emitting regions aligned along the vertical to the substrate can be fabricated by simple steps of production. |
| 公开日期 | 2003-05-20 |
| 申请日期 | 2000-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41916]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | ASHIDA, MASAYOSHI. Semiconductor laser and method for manufacturing the same. US6567449. 2003-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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