Semiconductor laser device fabricating method
文献类型：专利
| 作者 | SHIMA, AKIHIRO; SUSAKI, WATARU |
| 发表日期 | 1990-08-07 |
| 专利号 | US4946802 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device fabricating method |
| 英文摘要 | A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end to the opposite end, thereof wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region. |
| 公开日期 | 1990-08-07 |
| 申请日期 | 1988-11-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41917]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SHIMA, AKIHIRO,SUSAKI, WATARU. Semiconductor laser device fabricating method. US4946802. 1990-08-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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