Semiconductor laser diodes
文献类型：专利
| 作者 | PFEIFFER, HANS-ULRICH; CARTER, ANDREW CANNON; TROGER, JORG; LICHTENSTEIN, NORBERT; SCHWARZ, MICHAEL; JAKUBOWICZ, ABRAM; SVERDLOV, BORIS |
| 发表日期 | 2014-09-09 |
| 专利号 | US8831062 |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diodes |
| 英文摘要 | A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode. |
| 公开日期 | 2014-09-09 |
| 申请日期 | 2011-04-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | PFEIFFER, HANS-ULRICH,CARTER, ANDREW CANNON,TROGER, JORG,et al. Semiconductor laser diodes. US8831062. 2014-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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