Semiconductor device and a method of manufacturing a semiconductor device
文献类型：专利
| 作者 | ROSHAN, RAKESH; POOLE, BRENDAN; HOOPER, STEWART EDWARD; HEFFERNAN, JONATHAN |
| 发表日期 | 2007-08-28 |
| 专利号 | US7263115 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and a method of manufacturing a semiconductor device |
| 英文摘要 | A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown. |
| 公开日期 | 2007-08-28 |
| 申请日期 | 2004-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41920]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ROSHAN, RAKESH,POOLE, BRENDAN,HOOPER, STEWART EDWARD,et al. Semiconductor device and a method of manufacturing a semiconductor device. US7263115. 2007-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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