Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature
文献类型：专利
| 作者 | ADAMS, DAVID M.; MAKINO, TOSHIHIKO; CHIK, GEORGE K. D. |
| 发表日期 | 1996-01-09 |
| 专利号 | US5483547 |
| 著作权人 | NORTEL NETWORKS UK LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature |
| 英文摘要 | A Type II heterojunction formed of semiconductor material which normally forms a Type I heterojunction. The Type II heterojunction is created by using a carefully chosen stack of epitaxial semiconductor materials with modifications to the band structure through quantum mechanical confinement effects. This virtual type II heterojunction is incorporated adjacent to the active region in a single-quantum-well, ridge-waveguide laser structure. An anomalous "Negative-To" region is observed in which threshold current decreases with increasing temperature. A reduction in the temperature sensitivity of the threshold current of the laser structure results. |
| 公开日期 | 1996-01-09 |
| 申请日期 | 1994-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NORTEL NETWORKS UK LIMITED |
| 推荐引用方式 GB/T 7714 | ADAMS, DAVID M.,MAKINO, TOSHIHIKO,CHIK, GEORGE K. D.. Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature. US5483547. 1996-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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