Nitride semiconductor light emitting device
文献类型：专利
| 作者 | LEE, SUNG-NAM; PARK, YONG-JO; NAM, OK-HYUN; LEE, IN-HWAN; LEE, WON-SEOK; CHO, SHI-YUN; SONE, CHEOL-SOO |
| 发表日期 | 2004-06-01 |
| 专利号 | US6744064 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer. |
| 公开日期 | 2004-06-01 |
| 申请日期 | 2001-02-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | LEE, SUNG-NAM,PARK, YONG-JO,NAM, OK-HYUN,et al. Nitride semiconductor light emitting device. US6744064. 2004-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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