Semiconductor laser having optical guide layer doped for decreasing resistance
文献类型：专利
| 作者 | OHGOH, TSUYOSHI |
| 发表日期 | 2007-11-13 |
| 专利号 | US7295587 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having optical guide layer doped for decreasing resistance |
| 英文摘要 | In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivity type are formed in this order above a surface of a semiconductor substrate of the first conductivity type, and a second electrode of the first conductivity type is formed below the lower cladding layer. An optical guide layer is arranged between the quantum-well active layer and one or each of the lower cladding layer and the upper cladding layer. The whole or a portion of the optical guide layer contains a dopant so as to realize a carrier concentration of 3.0×1017 cm−3 or higher. |
| 公开日期 | 2007-11-13 |
| 申请日期 | 2006-03-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41935]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | OHGOH, TSUYOSHI. Semiconductor laser having optical guide layer doped for decreasing resistance. US7295587. 2007-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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