Method of manufacturing buried heterostructure semiconductor laser
文献类型：专利
| 作者 | KONDO, YASUHIRO |
| 发表日期 | 1993-11-09 |
| 专利号 | US5260230 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing buried heterostructure semiconductor laser |
| 英文摘要 | According a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor layer are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5x1018 atomsxcm-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy. |
| 公开日期 | 1993-11-09 |
| 申请日期 | 1992-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41945]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | KONDO, YASUHIRO. Method of manufacturing buried heterostructure semiconductor laser. US5260230. 1993-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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