Method of fabricating a high power semiconductor laser with self-aligned ion implantation
文献类型：专利
| 作者 | LEE, JUNG KEE; PARK, KYUNG HYUN; CHO, HO SUNG; NAM, EUN SOO; JANG, DONG HOON |
| 发表日期 | 2000-12-26 |
| 专利号 | US6165811 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating a high power semiconductor laser with self-aligned ion implantation |
| 英文摘要 | A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, forming an etching mask over the ohmic contact layer so as to expose channel regions and to shield the ridge regions between the channel regions, performing wet etching to etch the ohmic contact layer and the second upper cladding layer so as to expose the etching stop layer so as to form the channels and the ridges having narrower widths than the parts of the etching mask shielding the ridge regions, and implanting dopant ions into the parts of the first upper cladding layer and the active layer below the channels to form ion-implanted regions by using the etching mask as the ion implantation mask. |
| 公开日期 | 2000-12-26 |
| 申请日期 | 1998-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41953]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | LEE, JUNG KEE,PARK, KYUNG HYUN,CHO, HO SUNG,et al. Method of fabricating a high power semiconductor laser with self-aligned ion implantation. US6165811. 2000-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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