赤外半導体レ-ザ
文献类型：专利
| 作者 | 鈴木 正敏; 久代 行俊; 宇高 勝之; 秋葉 重幸; 松島 裕一; 田中 英明 |
| 发表日期 | 1996-06-14 |
| 专利号 | JP2529854B2 |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 赤外半導体レ-ザ |
| 英文摘要 | PURPOSE:To obtain an infrared semiconductor laser having a high inner quantum efficiency by making part of the optical waveguide layer an active region. CONSTITUTION:On a N-InP substrate 1, an InGaAsP optical waveguide layer 2 is stacked in which the electrical conductivity is varying from semi-insulation to P-type. Further, a P-InP upper clad layer 3 and a P-InGaAsP contact layer 4 are constructed thereon. Positive holes which have continuously been injected from the P-type InP layer 3 proceed to the boundary of the substrate 1, but they combine with electrons at the hetero junction plane and emit a light. The light emission wavelength is two times the wavelength of the forbidden band since the InGaAsP at the hetero interface is an intrinsic semiconductor. In this structure, the carrier injection efficiency is high, and by changing the composition of the intrinsic semiconductor InGaAsP, the oscillation wavelength can be changed from 2mum to about 3.35mum. |
| 公开日期 | 1996-09-04 |
| 申请日期 | 1987-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41955]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 鈴木 正敏,久代 行俊,宇高 勝之,等. 赤外半導体レ-ザ. JP2529854B2. 1996-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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