Method of fabricating a semiconductor laser device
文献类型：专利
| 作者 | HOSOBA, HIROYUKI; SEKI, AKINORI; HATA, TOSHIO; KONDOU, MASAFUMI; SUYAMA, TAKAHIRO; MATSUI, SADAYOSHI |
| 发表日期 | 1994-01-12 |
| 专利号 | EP0452146B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating a semiconductor laser device |
| 英文摘要 | A semiconductor laser device is provided which includes a semiconductor substrate (1) and a multi-layered structure disposed on the substrate, the multi-layered structure containing an AlxGa1-xAs (0 y) active layer (3) for laser oscillation formed on the first cladding layer, an AlxGa1-xAs (0 y) active layer (3) for laser oscillation, an AlGaAs (0 < x < 1) second cladding layer (22), a GaAs buffer layer (4), an AluGa1-uAs (0 < u < 1) etching stopper layer (5), an AlzGa1-zAs (0 < z < 1, z < u) current blocking layer (61), and a GaAs protective layer; etching the protective layer and the current blocking layer to form a striped groove as a current injection path; removing the exposed portion of the etching stopper layer (5) on the bottom of the striped groove; removing the portion of the buffer layer (4) on the bottom of the striped groove and at least one part of the protective layer by a melt-back technique; and growing an AlxGa1-xAs (0 < x < 1) third cladding layer (23) so as to bury the striped groove therein and growing a GaAs contact layer (7) on the third cladding layer. |
| 公开日期 | 1994-01-12 |
| 申请日期 | 1991-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOSOBA, HIROYUKI,SEKI, AKINORI,HATA, TOSHIO,et al. Method of fabricating a semiconductor laser device. EP0452146B1. 1994-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。