A quantum barrier semiconductor optical device
文献类型：专利
| 作者 | IRIKAWA, MICHINORI, FURUKAWA ELEC. CO. LTD.; IWASE, MASAYUKI, FURUKAWA ELEC. CO. LTD. |
| 发表日期 | 1996-03-13 |
| 专利号 | EP0485237B1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A quantum barrier semiconductor optical device |
| 英文摘要 | The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers (10) provided between active layer (3) and p-clad layer (6) or within p-clad layer (6) to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double heterostructure where active layer (3) having at least one GaInAs(P) layer is sandwiched between n-clad layer (2) and p-clad layer (6). In this case, the active layer (3) should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a DCCtype double hetero-structure made by growing an n-clad layer (2), a first active layer (13) having at least one GaInAs(P) sub-layer, a middle clad layer (4), a second active layer (5) having at least one GaInAs(P) sub-layer, and a p-clad layer (6) in the order of mention or vice versa and a super lattice resonance scattering type quantum barriers provided between the first active layer (3) and middle clad layer (4) or in the middle clad layer and/or between the second active layer (5) and p-clad layer (6) or within p-clad layer. In this case also, the active layer should desirablyhave quantum well structure and the quantum barriers should desirably be made up of strained layer super lattice. |
| 公开日期 | 1996-03-13 |
| 申请日期 | 1991-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41959]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | IRIKAWA, MICHINORI, FURUKAWA ELEC. CO. LTD.,IWASE, MASAYUKI, FURUKAWA ELEC. CO. LTD.. A quantum barrier semiconductor optical device. EP0485237B1. 1996-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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