半導体発光装置の製造方法
文献类型：专利
| 作者 | 岡崎 二郎 |
| 发表日期 | 1995-11-13 |
| 专利号 | JP1995105550B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置の製造方法 |
| 英文摘要 | PURPOSE:To ensure the excellent controllability of a semiconductor light emitting device and improve its characteristics by executing a selective anisotropic etching processing and a nonselective isotropic etching processing depending on the composition of a semiconductor layer when an active region is stripewise formed. CONSTITUTION:A diffraction grating is formed in a direction [011] on the plane (100) of an n-type InP substrate 1 and an InGaAsP waveguide layer 2, an InGaAsP active layer 3, a p-type InP confining layer 4 and a p-type InGaAsP contact layer 5 are sequentially formed on the same plane as above by epitaxial growth. A mask 6 is formed in the direction [011] on the surface of a semiconductor substrate and a selective anisotropic etching is sequentially applied to the contact layer 5, active layer 3, waveguide layer 2 and confinement layer 4. Then, a nonselective and isotropic etching processing is conducted to form a mesa section configuration wherein planes (111)A and (111)B do not appear. A p-type InP sequentially formed by embedding growth, the mask 6 is removed and an SiO2 insulative film 9, a p-side electrode 10 and an n-side electrode 11 are formed on the semiconductor substrate. Thus, a mesa etching can be performed without leaving the plane (111)A and the characteristics of a semiconductor light emitting device, such as threshold current, efficiency and the like, are improved. |
| 公开日期 | 1995-11-13 |
| 申请日期 | 1986-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41961]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 岡崎 二郎. 半導体発光装置の製造方法. JP1995105550B2. 1995-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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