気相成長方法及び埋め込み構造半導体レーザの製造方法
文献类型：专利
| 作者 | 黒田 尚孝; 菅生 繁男 |
| 发表日期 | 1996-12-05 |
| 专利号 | JP2586118B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 気相成長方法及び埋め込み構造半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To decrease a leakage current in an electron block layer by a method wherein iron and hydrogen chloride on the upstream side of a reaction tube are made to react with each other in an inert gas atmosphere in a method that a III-V compound semiconductor is epitaxially grown. CONSTITUTION:A group III element 11 and iron 13 are separated from each other in a source region on an upstream side of a growth chamber 10, the element 11 is made to react with hydrogen chloride diluted with hydrogen sent from an inlet tube 12a to form chloride of a group III element, and the iron 13 is made to react with hydrogen chloride diluted with an inert gas sent from a tube 12b to form iron chloride. Furthermore, phosphine (PH3) diluted with hydrogen is sent from a bypass tube 14 to supply a group V element to a growth region where a semiconductor substrate 15 is provided. By this setup, as hydrogen is low in partial pressure, most of introduced hydrogen chloride is conductive to the reaction with the iron 13 to form iron chloride and consequently a reaction efficiency is improved. In result, an n-type low resistive layer is restrained from being formed on a (111) A plane, so that a leakage current can be reduced in a current block layer. |
| 公开日期 | 1997-02-26 |
| 申请日期 | 1988-08-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41969]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 黒田 尚孝,菅生 繁男. 気相成長方法及び埋め込み構造半導体レーザの製造方法. JP2586118B2. 1996-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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