Bandgap tuning of semiconductor quantum well structures
文献类型：专利
| 作者 | ELMAN, BORIS S.; KOTELES, EMIL S.; MELMAN, PAUL; ARMIENTO, CRAIG A. |
| 发表日期 | 1993-08-24 |
| 专利号 | US5238868 |
| 著作权人 | GTE LABORATORIES INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bandgap tuning of semiconductor quantum well structures |
| 英文摘要 | A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice. |
| 公开日期 | 1993-08-24 |
| 申请日期 | 1991-07-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41971]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTE LABORATORIES INCORPORATED |
| 推荐引用方式 GB/T 7714 | ELMAN, BORIS S.,KOTELES, EMIL S.,MELMAN, PAUL,et al. Bandgap tuning of semiconductor quantum well structures. US5238868. 1993-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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