Unipolarer Halbleiterlaser
文献类型：专利
| 作者 | CAPASSO,FEDERICO; CHO,ALFRED YI; FAIST,JEROME; HUTCHINSON,ALBERT LEE; LURYI,SERGE; SIRTORI,CARLO; SIVCO,DEBORAH LEE |
| 发表日期 | 2000-06-15 |
| 专利号 | DE69510590T2 |
| 著作权人 | AT & T CORP. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Unipolarer Halbleiterlaser |
| 英文摘要 | This application discloses, a unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 mu m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions (11), a given active region being separated from an adjoining one by a doped "energy relaxation" region (12). The active region comprises one or more quantum wells. In one embodiment of the invention the active region is selected such that a radiative transition from a third to a second energy state substantially is a "diagonal" transition, and in another embodiment the active region is selected such that the radiative transition substantially is a "vertical" one. In the latter case the energy relaxation region advantageously comprises a superlattice Bragg reflector for charge carriers (typically electrons) of energy corresponding to the third energy state. |
| 公开日期 | 2000-06-15 |
| 申请日期 | 1995-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41984]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT & T CORP. |
| 推荐引用方式 GB/T 7714 | CAPASSO,FEDERICO,CHO,ALFRED YI,FAIST,JEROME,et al. Unipolarer Halbleiterlaser. DE69510590T2. 2000-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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