Semiconductor laser diode and method of manufacturing the same
文献类型：专利
| 作者 | HONG, SUNG UI; LEE, JIN HONG; KIM, JIN SOO; KWACK, HO SANG; OH, DAE KON |
| 发表日期 | 2009-03-24 |
| 专利号 | US7508857 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode and method of manufacturing the same |
| 英文摘要 | Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed. |
| 公开日期 | 2009-03-24 |
| 申请日期 | 2005-11-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | HONG, SUNG UI,LEE, JIN HONG,KIM, JIN SOO,et al. Semiconductor laser diode and method of manufacturing the same. US7508857. 2009-03-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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