MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
文献类型：专利
| 作者 | ROMANO, LINDA T.; HOFSTETTER, DANIEL; PAOLI, THOMAS L. |
| 发表日期 | 2001-09-04 |
| 专利号 | US6285698 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer |
| 英文摘要 | Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced. |
| 公开日期 | 2001-09-04 |
| 申请日期 | 1998-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41998]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | ROMANO, LINDA T.,HOFSTETTER, DANIEL,PAOLI, THOMAS L.. MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer. US6285698. 2001-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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