Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer
文献类型：专利
| 作者 | KUNIYASU, TOSHIAKI |
| 发表日期 | 2003-04-01 |
| 专利号 | US6541291 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer |
| 英文摘要 | In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer. |
| 公开日期 | 2003-04-01 |
| 申请日期 | 2001-08-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KUNIYASU, TOSHIAKI. Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer. US6541291. 2003-04-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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