System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
文献类型：专利
| 作者 | TAKEUCHI, TETSUYA; TAN, MICHAEL; CHANG, YING-IAN |
| 发表日期 | 2005-08-23 |
| 专利号 | US6934312 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom |
| 英文摘要 | A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 2 to 6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom. |
| 公开日期 | 2005-08-23 |
| 申请日期 | 2002-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42014]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, TETSUYA,TAN, MICHAEL,CHANG, YING-IAN. System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom. US6934312. 2005-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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